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參數(shù)資料
| 型號(hào)： | 934054010118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 35 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | 934054010118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 35 V/ 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 10 A
Low thermal resistance
V
F ≤ 0.6V
GENERAL DESCRIPTION
PINNING
SOT82
Dual, common cathode schottky
PIN
DESCRIPTION
rectifier
diodes
in
a
plastic
envelope. Intended for use as
1
anode 1
output rectifiers in low voltage, high
frequency switched mode power
2
cathode
supplies.
3
anode 2
The PBYR645CT series is supplied
in the conventional leaded SOT82
tab
cathode
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR6
35CT 40CT 45CT
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 100 C
-
35
40
45
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 119 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 119 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
75
A
current diode
t = 8.3 ms
-
82
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
150
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
5
K/W
to mounting base
both diodes
-
4
K/W
R
th j-a
Thermal resistance junction
in free air
-
100
-
K/W
to ambient
k
a1
a2
13
2
1
23
May 1998
1
Rev 1.200
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