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參數(shù)資料
| 型號(hào)： | 934054140215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 145K |
| 代理商： | 934054140215 |
1997 Dec 08
3
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
11
V
ID
drain current (DC)
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
Tamb ≤ 80 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
+150
°C
Fig.4 Power derating curve.
handbook, halfpage
0
40
80
160
250
0
200
MGM243
120
150
100
50
Ptot
(mW)
Tamb (°C)
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