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| 型號(hào)： | 934054697215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | 934054697215 |
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2003 Apr 10
5
Philips Semiconductors
Product specication
NPN resistor-equipped transistors;
R1 = 2.2 k
, R2 = 2.2 k
PDTC123E series
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =50V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
1
A
VCE =30V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
2mA
hFE
DC current gain
VCE =5V; IC =20mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input-off voltage
IC = 1 mA; VCE =5V
1.2
0.5
V
Vi(on)
input-on voltage
IC = 20 mA; VCE = 0.3 V
2
1.6
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
R2
R1
--------
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