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| 型號(hào)： | 934054711235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 643K |
| 代理商： | 934054711235 |
2000 Jul 19
7
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
Fig.8 Transfer characteristic; typical values.
VDS = 10 V; Tamb =25 °C; tp = 300 s; δ =0.
handbook, halfpage
0
3
2
1
0
15
MGM195
234
VGS (V)
ID
(A)
Fig.9
Capacitance as a function of drain-source
voltage; typical values.
VGS = 0; f = 1 MHz; Tamb =25 °C.
handbook, halfpage
0
160
80
120
40
0
10
50
MGM193
20
30
40
C
(pF)
VDS (V)
Ciss
Coss
Crss
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
VGD =0.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 65 °C.
handbook, halfpage
0
0.4
1.2
2
0
0.4
1.6
1.2
0.8
MGM197
0.8
VSD (V)
IS
(A)
(3)
(2)
(1)
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
Tamb =25 °C; tp = 300 s; δ =0.
(1) ID = 175 mA.
(2) ID = 350 mA.
(3) ID = 700 mA.
(4) ID =1A.
(5) ID = 1.4 A.
(6) ID = 2.8 A.
handbook, halfpage
10
101
1
10
6
24
0
MGM198
8
(5)
(4)
(3)
(2)
(1)
(6)
RDSon
(
)
VGS (V)
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