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參數(shù)資料
| 型號(hào)： | 934054830115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.4 A, 1400 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, LLDL, 2 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大小： | 113K |
| 代理商： | 934054830115 |
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1999 Nov 11
3
Philips Semiconductors
Product specication
Ultra-fast soft-recovery
controlled avalanche rectiers
BYD57 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYD57D to M
3.0
A
BYD57U and V
3.7
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj =25 °C
prior to surge; VR =VRRMmax
5.0
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.12
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 13 and 14
BYD57D to M
2.1
V
BYD57U and V
1.7
V
VF
forward voltage
IF =1A;
see Figs 13 and 14
BYD57D to M
3.6
V
BYD57U and V
2.3
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD57D
300
V
BYD57G
500
V
BYD57J
700
V
BYD57K
900
V
BYD57M
1100
V
BYD57U
1300
V
BYD57V
1500
V
IR
reverse current
VR =VRRMmax;
see Fig.15
5
A
VR =VRRMmax;
Tj = 165 °C; see Fig.15
100
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.18
BYD57D to J
30
ns
BYD57K and M
75
ns
BYD57U and V
150
ns
Cd
diode capacitance
f = 1 MHz; VR =0;
see Fig.16
20
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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