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參數資料
| 型號： | 934054887114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數： | 10/14頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 934054887114 |
1997 Feb 20
5
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
Fig.4
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
VCC = 50 V; tp =10 s; δ = 10%.
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
PL
(W)
130
110
120
MGL047
Fig.5
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.7)
VCC = 50 V; tp =10 s; δ = 10%.
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
η
C
(%)
50
40
45
MGL048
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