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參數(shù)資料
| 型號(hào)： | 934054924115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.07 A, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 934054924115 |
1998 Jul 16
3
Philips Semiconductors
Product specication
Schottky barrier diode
1PS79SB70
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.2
IF =1mA
410
mV
IF =10mA
750
mV
IF =15mA
1V
IR
reverse current
VR = 50 V; note 1; see Fig.3
100
nA
VR = 70 V; note 1; see Fig.3
10
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
2pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
450
K/W
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