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參數(shù)資料
| 型號： | 934054938163 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.5 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934054938163 |
1998 Dec 04
3
Philips Semiconductors
Product specication
Ripple blocking diode
BYQ63
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.8.
For more information please refer to the
‘General Part of associated Handbook.’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max; see Fig.5
1.3
V
IF = 1 A; see Fig.5
2.15
V
IR
reverse current
VR =VRRMmax;
see Fig.6
5
A
VR =VRRMmax; Tj = 165 °C;
see Fig.6
150
A
tfr
forward recovery time
when switched to IF =5A
in 50 ns; see Fig.9
1.5
s
ton
turn-on time
when switched from VF = 0 to
VF = 3 V; measured between
10% and 90% of IFmax;
see Fig.11
400
ns
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
150
ns
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.7
35
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
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