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參數(shù)資料
| 型號： | 934054965118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 99K |
| 代理商： | 934054965118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP45N03LT, PHB45N03LT, PHD45N03LT
Logic level FET
Fig.11. Sub-threshold drain current.
I
D = f(VGS); VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS)
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
1020
3040
50
0
5
10
15
PHP50N03LT
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
VDD=24V
ID=20A
Tj = 25C
0.1
1
10
100
1000
10000
9528-30
VDS / V
C / pF
Ciss
Coss
Crss
0
0.5
1
1.5
2
0
10
20
30
40
50
60
9528-30
VSDS / V
IF / A
Tj / C = 175
25
November 1998
5
Rev 1.500
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