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參數(shù)資料
| 型號(hào)： | 934054967118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 85K |
| 代理商： | 934054967118 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSR
Drain source clamp voltage
R
G = 10 k; ID = 10 A;
40
45
55
V
(peak value)
-55 < T
j < 175C
g
fs
Forward transconductance
V
DS = 25 V; ID = 10 A
20
53
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
2200
2900
pF
C
oss
Output capacitance
-
400
500
pF
C
rss
Feedback capacitance
-
215
300
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
12
18
s
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 k;
-
55
80
s
t
d off
Turn-off delay time
-
60
85
s
t
f
Turn-off fall time
-
45
60
s
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die
L
s
Internal source inductance
Measured from source lead
-
7.5
-
nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
52
A
current
I
DRM
Pulsed reverse drain current
-
208
A
V
SD
Diode forward voltage
I
F = 20 A ; VGS = 0 V
-
0.95
1.2
V
I
F = 40 A ; VGS = 0 V
-
1
-
V
CLAMPED ENERGY LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
W
DSRS
Non-repetitive drain-source
T
j = 25C prior to clamping;
-
450
mJ
clamped inductive turn off
I
D = 20 A; VDD < 16 V; VGS = 5 V;
energy
R
G = 10 k; inductive load
February 1998
3
Rev 1.100
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