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參數(shù)資料
| 型號： | 934055114215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934055114215 |
1999 Aug 04
3
Philips Semiconductors
Product specication
PNP BISS transistor
PMMT591A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
100
nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100
nA
hFE
DC current gain
VCE = 5 V; note 1
IC = 1 mA
300
IC = 100 mA
300
800
IC = 500 mA
250
IC = 1 A
160
VCEsat
collector-emitter saturation voltage note 1
IC = 100 mA; IB = 1mA
200
mV
IC = 500 mA; IB = 20 mA
350
mV
IC = 1 A; IB = 100 mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 50 mA; note 1
1.1
V
VBE
base-emitter voltage
VCE = 5 V; IC = 1 A; note 1
1V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
12
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
MHz
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