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參數(shù)資料
| 型號(hào)： | 934055191115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | 934055191115 |
1999 Apr 21
4
Philips Semiconductors
Product specication
NPN medium frequency transistor
BFS20W
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =10V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
103
10
102
1
MGR830
101
110
102
IC (mA)
hFE
(2)
(3)
(1)
Fig.3
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGR831
101
110
IC (mA)
VCEsat
(mV)
(1)
103
102
10
102
(2)
(3)
Fig.4
Base-emitter voltage as a function of
collector current; typical values.
VCE =10V.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
1000
200
MGR832
400
600
800
VBE
(mV)
101
110
102
IC (mA)
(2)
(3)
(1)
Fig.5
Collector current as a function of
collector-emitter voltage; typical values.
Tamb =25 °C.
(1) IB = 280 A.
(2) IB = 230 A.
(3) IB = 180 A.
(4) IB = 130 A.
(5) IB =80 A.
(6) IB =30 A.
handbook, halfpage
010
VCE (V)
IC
(mA)
(5)
(6)
(1)
25
0
5
MGR833
10
15
20
2468
(2)
(3)
(4)
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