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參數(shù)資料
| 型號： | 934055295135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.6 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, LLDL, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 934055295135 |
1999 Nov 11
2
Philips Semiconductors
Product specication
Ultra fast low-loss rectier
BYD167
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Smallest surface mount rectifier
package.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
600
V
VR
continuous reverse voltage
600
V
IF(AV)
average forward current
Ttp = 135 °C; averaged over any
20 ms period; see Figs 5 and 6
1A
Ttp =70 °C; averaged over any
20 ms period; see Figs 5 and 6
2A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
VR =VRRMmax
25
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj = 150 °C; see Fig.2
1.05
V
IF = 1 A; see Fig.2
1.25
V
IR
reverse current
VR =VRRMmax; see Fig.3
5
A
VR =VRRMmax; Tj = 150 °C; see Fig.3
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A
50
ns
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