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參數(shù)資料
| 型號： | 934055296135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 1 A, SNUBBERLESS TRIAC |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 51K |
| 代理商： | 934055296135 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA204W series B and C
high commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:2
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...B
...C
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
50
35
mA
T2+ G-
-
50
35
mA
T2- G-
-
50
35
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
30
20
mA
T2+ G-
-
45
30
mA
T2- G-
-
30
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
30
20
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
BTA204W-
...B
...C
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
1000
-
V/
s
off-state voltage
exponential waveform; gate open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C; IT(RMS) = 1 A;
6
3
-
A/ms
commutating current
dV
com/dt = 20V/s; gate open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max); IG = 0.1 A;
-
2
s
time
dI
G/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
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