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參數(shù)資料
| 型號(hào)： | 934055304135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 934055304135 |
December 1998
3
Rev 1.000
Philips Semiconductors
Product specication
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:2
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
6
12
20
mA
T2+ G-
-
9
18
30
mA
T2- G-
-
6
12
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
6
12
20
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);20
30
50
-
V/
s
off-state voltage
T
j = 125 C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
1.0
2.0
2.5
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 20V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
5.0
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 0.1V/s; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
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