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參數(shù)資料
| 型號(hào)： | 934055320118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 48K |
| 代理商： | 934055320118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
1.5
K/W
junction to mounting base
half cycle
-
2.0
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA212B-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
1.0
5
10
25
mA
T2+ G-
-
2.2
5
10
25
mA
T2- G-
-
3.3
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
6
15
25
30
mA
T2+ G-
-
6
25
30
40
mA
T2- G-
-
9
25
30
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
3.8
15
25
30
mA
...D, E, F
V
T
On-state voltage
I
T = 17 A
-
1.3
1.6
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA212B-
...D
...E
...F
...D
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);
2060
7030
-
V/
s
off-state voltage
T
j = 110 C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 C;
1.8
3.5
5
3
-
A/ms
commutating current
I
T(RMS) = 12 A;
dV
com/dt = 20V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 C;
5
16
19
100
-
A/ms
commutating current
I
T(RMS) = 12 A;
dV
com/dt = 0.1V/s; gate
open circuit
...D, E, F
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
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