參數(shù)資料
型號: 934055323118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 600 V, 12 A, TRIAC
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 48K
代理商: 934055323118
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed
commutation
SYMBOL
PARAMETER
MAX.
UNIT
triacs in a plastic envelope suitable for
surface mounting intended for use in
BTA212B-
600D
-
motor control circuits or with other highly
BTA212B-
600E
800E
inductive loads. These devices balance
BTA212B-
600F
800F
the
requirements
of
commutation
V
DRM
Repetitive peak off-state
600
800
V
performance and gate sensitivity. The
voltages
"sensitive gate" E series and "logic level"
I
T(RMS)
RMS on-state current
12
A
D series are intended for interfacing with
I
TSM
Non-repetitive peak on-state
95
A
low power drivers, including micro
current
controllers.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
-800
V
DRM
Repetitive peak off-state
-
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
12
A
T
mb ≤ 99 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
t = 20 ms
-
95
A
t = 16.7 ms
-
105
A
I
2tI2t for fusing
t = 10 ms
-
45
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 0.2 A;
100
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
13
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
February 2000
1
Rev 1.000
相關(guān)PDF資料
PDF描述
934055320118 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC
934055326118 600 V, 12 A, TRIAC
934055343183 0.05 A, 4000 V, SILICON, SIGNAL DIODE
934055365127 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-247
934055371127 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-247
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055512115 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube
934056947115 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R