參數(shù)資料
型號(hào): 934055384135
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, SMD, LDMOST, 2 PIN
文件頁(yè)數(shù): 8/12頁(yè)
文件大小: 91K
代理商: 934055384135
2000 Dec 20
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1046
handbook, halfpage
010
PL (PEP) (W)
d5
(dBc)
50
0
20
60
80
40
20
30
40
MLD459
(1)
(3)
(2)
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
Fig.6
Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
handbook, halfpage
010
PL (PEP) (W)
d7
(dBc)
50
0
20
60
80
40
20
30
40
MLD460
(1)
(2)
(3)
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
Fig.7
Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
handbook, halfpage
020
10
0
2
4
6
8
4
8
12
16
PL (W)
EVM
(%)
MLD461
peak
rms
Fig.8
Error vector magnitude (EVM) / EDGE
8PSK as a functions of load power; typical
values.
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
handbook, halfpage
04
PL (W)
Gp
(dB)
20
15
5
0
10
812
16
MLD462
η
(%)
Gp
EVM
(%)
η
40
30
10
0
20
EVM
Fig.9
EDGE 8PSK EVM, gain and efficiency as
functions of load power; typical values.
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
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