參數(shù)資料
型號： 934055389112
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： SOT-115J, 7 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 49K
代理商： 934055389112
2001 Oct 18
2
Philips Semiconductors
Product specication
200 MHz, 22 dB gain reverse amplier
BGY67
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
Hybrid amplifier module for CATV
systems operating over a frequency
range of 5 to 200 MHz at a voltage
supply of +24 V (DC). The device is
intended as a reverse amplifier for
use in two way systems.
PINNING - SOT115J
PIN CONFIGURATION
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
fpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 10 MHz
21.5
22.5
dB
Itot
total current consumption (DC)
VB = +24 V
215
230
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
mounting base operating temperature
20
+90
°C
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