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參數(shù)資料
| 型號： | 934055390112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 49K |
| 代理商： | 934055390112 |
2001 Oct 18
3
Philips Semiconductors
Product specication
200 MHz, 24 dB gain reverse amplier
BGY67A
CHARACTERISTICS
Table 1
Bandwidth 5 to 200 MHz; Tmb =30 °C; ZS =ZL =75
Notes
1. fp = 83.25 MHz; Vp = 50 dBmV;
fq = 109.25 MHz; Vq = 50 dBmV;
measured at fp +fq = 192.5 MHz.
2. Measured according to DIN45004B;
fp = 35.25 MHz; Vo =Vp;
fq = 42.25 MHz; Vq =Vo 6 dB;
fr = 44.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 33.25 MHz.
3. Measured according to DIN45004B;
fp = 187.25 MHz; Vo =Vp;
fq = 194.25 MHz; Vq =Vo 6 dB;
fr = 196.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 185.25 MHz.
4. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 10 MHz
23.5
24.5
dB
SL
slope cable equivalent
f = 5 to 200 MHz
0.2
+0.5
dB
FL
atness of frequency response
f = 5 to 200 MHz
±0.2
dB
S11
input return losses
f = 5 to 200 MHz
20
dB
S22
output return losses
f = 5 to 200 MHz
20
dB
CTB
composite triple beat
22 channels at; V= 50 dBmV;
measured at 175.25 MHz
67
dB
Xmod
cross modulation
22 channels at; Vo = 50 dBmV;
measured at 55.25 MHz
59
dB
d2
second order distortion
Vo = 50 dBmV; note 1
67
dB
Vo
output voltage
dim = 60 dB; note 2
67
dBmV
dim = 60 dB; note 3
64
dBmV
F
noise gure
f = 200 MHz
5.5
dB
Itot
total current consumption
DC value; VB = +24 V; note 4
215
230
mA
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