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參數(shù)資料
| 型號： | 934055395215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934055395215 |
1999 May 27
2
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
PDTA123JT
FEATURES
Built-in bias resistors (typ 2.2 k
and 47 k
respectively)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
2
1
3
MAM100
Top view
R1
R2
3
2
1
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
TYPE
NUMBER
MARKING
CODE(1)
PDTA123JT
23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
VI
input voltage
positive
+5
V
negative
12
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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