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參數(shù)資料
| 型號： | 934055402127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 9 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263B-01, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 934055402127 |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK219-50Y
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous supply voltage
0
50
V
I
L
Continuous load current
T
mb ≤ 114C-
6
A
P
D
Total power dissipation
T
mb ≤ 25C
-
41
W
T
stg
Storage temperature
-55
175
C
T
j
Continuous junction temperature
1
-
150
C
T
sold
Lead temperature
during soldering
-
260
C
Reverse battery voltages
2
-V
BG
Continuous reverse voltage
-
16
V
-V
BG
Peak reverse voltage
-
32
V
Application information
R
I, RS
External resistors
3
to limit input, status currents
3.2
-
k
Input and status
I
I, IS
Continuous currents
-5
5
mA
I
I, IS
Repetitive peak currents
δ ≤ 0.1, tp = 300 s
-50
50
mA
Inductive load clamping
I
L = 1 A, VBG = 16 V
E
BL
Non-repetitive clamping energy
T
j = 150C prior to turn-off
-
75
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base
-
2.5
3
K/W
R
th j-a
Junction to ambient
in free air
-
60
75
K/W
1 For normal continuous operation. A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
July 2001
2
Rev 2.000
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