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參數(shù)資料
| 型號(hào)： | 934055403118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 2 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 934055403118 |
Philips Semiconductors
Product Specification
TOPFET high side switch
BUK220-50Y
SMD version of BUK219-50Y
STATIC CHARACTERISTICS
Limits are at -40C
≤ T
mb ≤ 150C and typicals at Tmb = 25 C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G = 1 mA
50
55
65
V
BL
Battery to load
I
L = IG = 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L = 10 mA
18
23
28
V
-V
LG
Negative load voltage
1
I
L = 1 A; tp = 300 s20
25
30
V
Supply voltage
battery to ground
V
BG
Operating range
2
-
5.5
-
35
V
Currents
9 V
≤ V
BG ≤ 16 V
I
B
Quiescent current
3
V
LG = 0 V
-
20
A
T
mb = 25C
-
0.1
2
A
I
L
Off-state load current
4
V
BL = VBG
--
20
A
T
mb = 25C
-
0.1
1
A
I
G
Operating current
5
I
L = 0 A
-
2
4
mA
I
L
Nominal load current
6
V
BL = 0.5 V
2
-
A
Resistances
V
BG
I
L
t
p
T
mb
R
ON
On-state resistance
7
9 to 35 V
1 A
300
s
25C
-
135
180
m
150C
-
330
m
R
ON
On-state resistance
6 V
1 A
300
s
25C
-
170
225
m
150C
-
410
m
R
G
Internal ground resistance
I
G = 10 mA
95
150
190
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R
ON tests are continuous.
The specified pulse duration t
p refers only to the applied load current.
July 2001
3
Rev 2.000
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