參數(shù)資料
型號(hào): 934055405127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 50K
代理商: 934055405127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7505-30A
Standard level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
02468
10
0
100
200
300
400
ID/A
VDS/V
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
20.0
14.0
12.0
VGS/V =
01234
567
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
0
204060
80
100
3
4
5
6
7
8
9
10
11
RDS(ON)/mOhm
ID/A
VGS/V =
5.5
6.0
6.5
7.0
8.0
10.0
0
20
406080
100
0
10
20
30
40
50
60
70
80
90
gfs/S
ID/A
5
101520
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
RDS(ON)/mOhm
VGS/V
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
September 1999
4
Rev 1.100
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