參數(shù)資料
型號(hào)： 934055406127
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 50K
代理商： 934055406127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9505-30A
Logic level FET
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
30
-
V
voltage
T
j = -55C
27
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 30 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 25 A
-
4.3
5
m
resistance
T
j = 175C
-
9.3
m
V
GS = 10 V; ID = 25 A
-
3.9
4.6
m
V
GS = 4.5 V; ID = 25 A
-
5.4
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
6500
8600
pF
C
oss
Output capacitance
-
1500
1800
pF
C
rss
Feedback capacitance
-
1000
1350
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2;
-
45
65
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
220
330
ns
t
d off
Turn-off delay time
-
435
600
ns
t
f
Turn-off fall time
-
320
450
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
75
A
current
I
DRM
Pulsed reverse drain current
-
240
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 75 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 75 A; -dIF/dt = 100 A/s;
-
400
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
1.0
-
C
August 1999
2
Rev 1.100
相關(guān)PDF資料
PDF描述
934055408127 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934055414118 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
934056832127 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
05W22 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:8; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:16-8
934055409127 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055512115 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube
934056947115 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*