參數(shù)資料
型號: 934055410127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 70K
代理商: 934055410127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9515-100A
Logic level FET
BUK9615-100A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
024
68
10
0
50
100
150
200
250
ID/A
VDS/V
VGS/V =
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
5.0
10.0
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
0
20406080
100
11
12
13
14
15
16
17
18
19
20
RDS(ON)/mOhm
ID/A
VGS/V =
3.0
3.2
3.4
3.6
4.0
5.0
0
204060
80
100
0
50
100
150
gfs/S
ID/A
34
56
7
8
9
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
RDS(ON)/mOhm
VGS/V
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
November 1999
4
Rev 1.000
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