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參數(shù)資料
| 型號(hào)： | 934055440113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.7 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | 934055440113 |
1998 Dec 03
2
Philips Semiconductors
Product specication
Fast soft-recovery rectier
BYV1100
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs.2 and 4
1.7
A
Tamb =60 °C; printed-circuit board
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4
1.0
A
IFRM
repetitive peak forward current
Ttp =55 °C; see Fig.6
15
A
Tamb =60 °C; see Fig.7
9.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
15
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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