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參數(shù)資料
| 型號(hào)： | 934055501112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 934055501112 |
2002 Apr 18
3
Philips Semiconductors
Product specication
860 MHz, 25.5 dB gain push-pull amplier
CGY887A
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
25.2
25.8
dB
f = 870 MHz
25.7
27
dB
SL
straight line
f = 40 to 870 MHz
0.5
1.4
dB
FL
atness of frequency response
f = 40 to 870 MHz
±0.5
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
20
dB
f = 160 to 320 MHz
20
dB
f = 320 to 550 MHz
20
dB
f = 550 to 640 MHz
19
dB
f = 640 to 750 MHz
17
dB
f = 750 to 870 MHz
17
dB
s22
output return losses
f = 40 to 80 MHz
21
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
17
dB
f = 320 to 550 MHz
16
dB
f = 550 to 640 MHz
16
dB
f = 640 to 750 MHz
16
dB
f = 750 to 870 MHz
16
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
129 channels at; Vo = 40 dBmV;
measured at 745.25 MHz
62
dB
Xmod
cross modulation
129 channels at; Vo = 40 dBmV;
measured at 55.25 MHz
56
dB
CSO
composite second order
distortion
129 channels at; Vo = 40 dBmV;
measured at 860.5 MHz
59
dB
129 channels at; Vo = 40 dBmV;
measured at 150 MHz
69
dB
d2
second order distortion
note 1
67
dB
Vo
output voltage
dim = 60 dB; note 2
62
dBmV
NF
noise gure
f = 50 MHz
5.5
dB
f = 100 to 870MHz
5dB
Itot
total current consumption (DC)
note 3
240
mA
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