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參數(shù)資料
| 型號(hào)： | 934055519215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 75K |
| 代理商： | 934055519215 |
2000 Jan 05
2
Philips Semiconductors
Product specication
N-channel junction FET
BF862
FEATURES
High transition frequency for excellent sensitivity in
AM car radios
High transfer admittance.
APPLICATIONS
Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
PINNING SOT23
PIN
DESCRIPTION
1
source
2
drain
3
gate
handbook, halfpage
s
d
g
21
3
MAM036
Top view
Fig.1 Simplified outline and symbol.
Marking code: 2Ap.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
20
V
VGSoff
gate-source cut-off voltage
0.3
0.8
1.2
V
IDSS
drain-source current
10
25
mA
Ptot
total power dissipation
Ts ≤ 90 °C
300
mW
y
fs
transfer admittance
35
45
mS
Tj
junction temperature
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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