參數(shù)資料
型號： 934055555127
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 71K
代理商： 934055555127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
1.0
mA
T
j = 125 C
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
1.0
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 2.0 A;IB = 0.4 A
-
0.15
1.0
V
CEsat
I
C = 5.0 A;IB = 1.0 A
-
0.35
2.0
V
CEsat
I
C = 5.0 A;IB = 1.0 A
-
0.51
3.0
V
(T
C = 100C)
V
BEsat
Base-emitter saturation voltage
I
C = 2.0 A;IB = 0.4 A
-
0.92
1.2
V
BEsat
I
C = 5.0 A;IB = 1.0 A
-
1.05
1.6
V
BEsat
I
C = 5.0 A;IB = 1.0 A
-
1.00
1.5
V
(T
C = 100C)
h
FE
DC current gain
I
C = 2.0 A; VCE = 5 V
8
17
40
h
FEsat
I
C = 5.0 A; VCE = 5 V
5
9
30
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
s
Turn-off storage time
1.8
3.0
s
t
f
Turn-off fall time
0.3
0.7
s
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
1.2
2.0
s
t
f
Turn-off fall time
40
120
ns
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
1.6
3.0
s
t
f
Turn-off fall time
100
200
ns
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
相關(guān)PDF資料
PDF描述
934055557125 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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