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參數(shù)資料
| 型號： | 934055559127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 9 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220F, 2 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 934055559127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.03 V
High thermal cycling performance
Isolated mounting tab
I
F(AV) = 9 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode (k)
2
anode (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV29F/BYV29X
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
R
Continuous reverse voltage
T
hs ≤ 138C
1
-
300
400
500
V
I
F(AV)
Average forward current
2
square wave;
δ = 0.5;
-
9
A
T
hs ≤ 90 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
k
a
12
case
12
case
1 T
hs de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
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