參數(shù)資料
型號(hào)： 934055627115
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： CERAMIC, SMD, 8 PIN
文件頁(yè)數(shù)： 11/16頁(yè)
文件大?。?/td> 76K
代理商： 934055627115
1999 Oct 20
4
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF202
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 3 mA; VGS =0
40
V
VGS(th)
gate-source threshold voltage
ID = 3 mA; VDS =10V
2
4.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 12.5 V
10
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
IDSX
on-state drain current
VGS = 15 V; VDS =10V
1.3
A
RDSon
drain-source on-state resistance
ID = 0.3 A; VGS =15V
3.5
4
gfs
forward transconductance
ID = 0.3 A; VDS = 10 V
80
135
mS
Cis
input capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
5.3
pF
Cos
output capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
7.8
pF
Crs
feedback capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
1.8
pF
handbook, halfpage
15
5
10
0
MGP111
110
102
103
T.C.
(mV/K)
ID (mA)
Fig.3
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
VDS =10V.
handbook, halfpage
0
1600
800
1200
400
0
420
MGP112
812
16
ID
(mA)
VGS (V)
Fig.4
Drain current as a function of gate-source
voltage; typical values.
VDS = 10 V; Tj =25 °C.
相關(guān)PDF資料
PDF描述
05W5 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:16-99
934055636118 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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934055637118 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
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