- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24699 > 934055646127 (NXP SEMICONDUCTORS) 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 934055646127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934055646127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7514-55
Standard level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a plastic envelope using
V
DS
Drain-source voltage
55
V
’trench’ technology. The device
I
D
Drain current (DC)
68
A
features very low on-state resistance
P
tot
Total power dissipation
142
W
and has integral zener diodes giving
T
j
Junction temperature
175
C
ESD protection up to 2kV. It is
R
DS(ON)
Drain-source on-state
14
m
intended for use in automotive and
resistance
V
GS = 10 V
general
purpose
switching
applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
16
V
I
D
Drain current (DC)
T
mb = 25 C
-
68
A
I
D
Drain current (DC)
T
mb = 100 C
-
48
A
I
DM
Drain current (pulse peak value)
T
mb = 25 C
-
240
A
P
tot
Total power dissipation
T
mb = 25 C
-
142
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage, all pins
(100 pF, 1.5 k
)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.05
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
d
g
s
12 3
tab
April 1998
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| 934055647118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934045240118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934055648127 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934055649118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 05W7 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復。