參數(shù)資料
型號: 934055648127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/10頁
文件大?。?/td> 87K
代理商: 934055648127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9514-55
Logic level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
2
468
10
0
20
40
60
80
100
ID/A
VDS/V
10
5
4
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
VGS/V =
0
204060
80
100
0
10
20
30
40
50
60
70
gfs/S
ID/A
10
12
14
16
18
20
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100
RDS(ON)/mOhm
VGS/V =
3.6
4
4.2
4.4
4.6
5
ID/A
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
01
234
5
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175
25
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998
4
Rev 1.000
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