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參數(shù)資料
| 型號： | 934055650118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 63 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 303K |
| 代理商： | 934055650118 |
Philips Semiconductors
BUK7520-100A; BUK7620-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 5 February 2001
6 of 15
9397 750 07885
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
76
ns
Qr
recovered charge
282
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd53
0
50
100
150
200
250
02
46
8
10
VDS (V)
ID
(A)
VGS (V) =
20
4.5
5.5
6.5
7.5
8
9
10
03nd52
12
14
16
18
20
22
510
15
20
VGS (V)
RDSon
(m
)
03nd54
0
10
20
30
40
50
0
50
100
150
200
250
ID (A)
RDSon
(m
)
VGS (V) = 5.5
6
6.5
7
810
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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