參數(shù)資料
型號(hào)： 934055652127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 11/15頁(yè)
文件大?。?/td> 310K
代理商： 934055652127
Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 7 February 2001
5 of 15
9397 750 07915
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
17
20
m
Tj = 175 °C
50
m
VGS = 4.5 V; ID =25A
22
m
VGS =10V; ID =25A
16
19
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
4790
6385
pF
Coss
output capacitance
450
542
pF
Crss
reverse transfer capacitance
270
400
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
35
ns
tr
rise time
143
ns
td(off)
turn-off delay time
288
ns
tf
fall time
131
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
相關(guān)PDF資料
PDF描述
934055653118 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
05W9 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11
934055654127 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934055655118 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
934055657118 41 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
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