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參數(shù)資料
| 型號： | 934055653118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 310K |
| 代理商： | 934055653118 |
Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 7 February 2001
2 of 15
9397 750 07915
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
100
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
63
A
Ptot
total power dissipation
Tmb =25 °C
200
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID =25A
17
20
m
Tj =25 °C; VGS = 4.5 V; ID =25A
22
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
100
V
VDGR
drain-gate voltage (DC)
RGS =20k
100
V
VGS
gate-source voltage (DC)
±10
V
VGSM
non-repetitive gate-source voltage
tp ≤ 50 s
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
63
A
45
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
253
A
Ptot
total power dissipation
200
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
63
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
253
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =63A;
VDS ≤ 100 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
420
mJ
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