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參數(shù)資料
| 型號： | 934055654127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大小： | 325K |
| 代理商： | 934055654127 |
Philips Semiconductors
BUK7535-100A; BUK7635-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 02 February 2001
5 of 15
9397 750 07829
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 °C
21
35
m
Tj = 175 °C
88
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1900
2535
pF
Coss
output capacitance
250
301
pF
Crss
reverse transfer capacitance
150
205
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =10V; RG =10 ;
15
ns
tr
rise time
67
ns
td(off)
turn-off delay time
56
ns
tf
fall time
35
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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