參數(shù)資料
型號: 934055657118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 41 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁數(shù): 11/15頁
文件大?。?/td> 326K
代理商: 934055657118
Philips Semiconductors
BUK9535-100A; BUK9635-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 22 January 2001
5 of 15
9397 750 07808
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
30
35
m
Tj = 175 °C
88
m
VGS = 4.5 V; ID =25A
39
m
VGS =10V; ID =25A
29
34
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
2660
3573
pF
Coss
output capacitance
265
314
pF
Crss
reverse transfer capacitance
170
220
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
10
ns
tr
rise time
62
ns
td(off)
turn-off delay time
194
ns
tf
fall time
108
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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