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參數(shù)資料
| 型號： | 934055683127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 269K |
| 代理商： | 934055683127 |
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
2 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 oC
-
200
V
VDGR
drain-gate voltage (DC)
Tj =25to175 oC; RGS =20k
-
200
V
VGS
gate-source voltage
-
±20
V
ID
drain current (DC)
Tmb =25 °C
-
14
A
Tmb = 100 °C
-
10
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-56
A
Ptot
total power dissipation
-
125
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
14
A
ISM
peak source (diode forward) current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
56
A
Avalanche ruggedness
EDS(ALS) non-repetitive avalanche energy
unclamped inductive load; ID =14A;
tp =20 s; VDD ≤ 25 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C;
-70
mJ
IDS(ALM)
peak non-repetitive avalanche current
-
14
A
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