參數(shù)資料
型號(hào)： 934055708112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁(yè)數(shù)： 10/15頁(yè)
文件大?。?/td> 152K
代理商： 934055708112
2003 Mar 13
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1043
handbook, halfpage
0
20
16
12
8
48
16
12
MDB150
Gp
(dB)
PL (PEP)(W)
Gp
ηD
60
40
20
0
ηD
(%)
Fig.2
Power gain and efficiency as functions of
peak envelope load power; typical values.
Two-tone performance.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
handbook, halfpage
04
8
16
0
20
60
80
40
12
MDB151
dim
(dBC)
PL (PEP)(W)
d3
d5
d7
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
Two-tone performance.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
handbook, halfpage
0
22
18
14
10
70
50
30
10
420
812
16
MDB152
Gp
(dB)
Gp
PL (W)
ηD
(%)
ηD
Fig.4
Power gain and efficiency as functions of
load power; typical values.
Single-tone performance.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f = 960 MHz.
handbook, halfpage
800
840
1000
6
2
6
10
2
880
920
960
MDB148
Zi
(
)
f (MHz)
ri
Xi
Fig.5
Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes; see Fig.7.
相關(guān)PDF資料
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934055717118 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
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05WS15 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-11
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