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參數(shù)資料
| 型號： | 934055731215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 934055731215 |
2003 Mar 25
2
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT754 series
FEATURES
Very low forward voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption
applications, e.g. hand-held
applications.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
PINNING
PIN
BAT754
AC
S
1a
k1
a1
2
n.c.
k2
a2
k2
3k
a1,a2 k1,k2 k1,a2
Fig.1
Simplified outline
(SOT23) and pin
configuration.
handbook, 2 columns
2
1
3
MGC421
Top view
Fig.2
BAT754 single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3
BAT754A diode
configuration (symbol).
3
12
MLC360
Fig.4
BAT754C diode
configuration (symbol).
3
12
MLC359
Fig.5
BAT754S diode
configuration (symbol).
3
12
MLC358
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
TYPE NUMBER
MARKING
CODE(1)
BAT754
2K*
BAT754A
2L*
BAT754C
2M*
BAT754S
2N*
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| 934055732215 | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
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