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參數(shù)資料
| 型號： | 934055754215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934055754215 |
1999 Apr 13
4
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
PDTA143ET
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
MBK794
101
1
10
102
IC (mA)
hFE
103
10
102
1
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
MBK793
1
10
102
1
(2)
(3)
(1)
101
102
IC (mA)
VCEsat
(V)
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
10
(2)
(3)
(1)
1
101
MBK796
102
101
1
10
IC (mA)
Vi(off)
(V)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
1
10
101
MBK795
101
1
10
102
IC (mA)
Vi(on)
(V)
(1) (2) (3)
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