參數(shù)資料
型號(hào): 934055761118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, DPAK-3
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 165K
代理商: 934055761118
August 1999
2
Rev 1.000
Philips Semiconductors
Product specication
PSMN130-200D
N-channel TrenchMOS(TM) transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 20 A
R
DS(ON) ≤ 130 m
GENERAL DESCRIPTION
PINNING
SOT428 (DPAK)
SiliconMAX products use the latest
PIN
DESCRIPTION
Philips
Trench
technology
to
achieve
the
lowest
possible
1
gate
on-state
resistance
in
each
package at each voltage rating.
2
drain
1
Applications:-
3
source
d.c. to d.c. converters
switched mode power supplies
tab
drain
The PSMN130-200D is supplied in
the
SOT428
(Dpak)
surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb = 25 C; VGS = 10 V
-
20
A
T
mb = 100 C; VGS = 10 V
-
14
A
I
DM
Pulsed drain current
T
mb = 25 C
-
80
A
P
D
Total power dissipation
T
mb = 25 C
-
150
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
1
2
3
tab
1 It is not possible to make connection to pin 2 of the SOT428 package.
相關(guān)PDF資料
PDF描述
934055763118 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
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05WS1 Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-11
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