參數(shù)資料
型號(hào)： 934055781127
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 86K
代理商： 934055781127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PSMN040-200W
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 50 A
R
DS(ON) ≤ 40 m
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
SiliconMAX products use the latest
PIN
DESCRIPTION
Philips
Trench
technology
to
achieve
the
lowest
possible
1
gate
on-state
resistance
in
each
package at each voltage rating.
2
drain
Applications:-
3
source
d.c. to d.c. converters
switched mode power supplies
tab
drain
The PSMN040-200W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb = 25 C
-
50
A
T
mb = 100 C
-
36
A
I
DM
Pulsed drain current
T
mb = 25 C
-
200
A
P
D
Total power dissipation
T
mb = 25 C
-
300
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 50 A;
-
661
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
I
AS
Non-repetitive avalanche
-
50
A
current
d
g
s
2
3
1
August 1999
1
Rev 1.000
相關(guān)PDF資料
PDF描述
05WS20 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
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