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參數(shù)資料
| 型號(hào)： | 934055784115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 934055784115 |
1999 Dec 15
3
Philips Semiconductors
Product specication
NPN switching double transistor
PMBT3904D
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB =30V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =6V
50
nA
hFE
DC current gain
VCE = 1 V; note 1; Fig.3
IC = 0.1 mA
60
IC = 1 mA
80
IC = 10 mA
100
300
IC =50mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB =1mA
200
mV
IC = 50 mA; IB =5mA
200
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB =5mA
950
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VBE = 500 mV; f = 1 MHz
8pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 300
MHz
F
noise gure
IC = 100 A; VCE =5V; RS =1k;
f = 10 Hz to 15.7 kHz
5dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 10 mA; IBon = 1 mA; VCC =3V;
VBB = 1.9 V
65
ns
td
delay time
35
ns
tr
rise time
35
ns
toff
turn-off time
240
ns
ts
storage time
200
ns
tf
fall time
50
ns
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