參數(shù)資料
型號(hào): 934055802118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 108K
代理商: 934055802118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 45A
Tj = 25 C
VDD = 20 V
VDD = 80 V
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
August 1999
6
Rev 1.000
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05WS24 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
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