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參數(shù)資料
| 型號： | 934055810118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 100 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 934055810118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP27NQ10T, PHB27NQ10T
PHD27NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 27A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
5
10
15
20
25
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
August 1999
6
Rev 1.000
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