參數(shù)資料
型號： 934055823135
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù)： 11/16頁
文件大小： 120K
代理商： 934055823135
2000 Apr 11
4
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specied.
Notes
1. Not used MOS-FET: VG1-S = 0; VDS =0.
2. Gate 2 capacitance of both MOS-FETs.
3. Measured in test circuit of Fig.20.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specied
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 A7
V
V(BR)G1-SS
gate 1-source breakdown voltage
VGS =VDS = 0; IG1-S =10mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VGS =VDS = 0; IG2-S =5mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 A
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VDS =5V; VG1-S =4V; ID = 100 A
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG = 120 k; note 1
12
20
mA
IG1-S
gate 1 cut-off current
VG1-S =5V; VG2-S =VDS =0
50
nA
IG2-S
gate 2 cut-off current
VG2-S =5V; VG1-S =VDS =0
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specied (note 1)
yfs
forward transfer admittance
Tj =25 °C
364350mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2
2.8
3.6
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz; (note 2)
7pF
Coss
output capacitance
f = 1 MHz
1.6
2.5
pF
Crss
reverse transfer capacitance
f = 1 MHz
30
50
fF
F
noise gure
f = 800 MHz; YS =YS opt
2
2.8
dB
Xmod
cross-modulation
fw = 50 MHz; funw = 60 MHz; (note 3)
input level for k = 1% at 0 dB AGC
85
dB
V
input level for k = 1% at 40 dB AGC
100
dB
V
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