參數(shù)資料
型號(hào): 934055878118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 12/15頁
文件大?。?/td> 310K
代理商: 934055878118
Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 1 February 2001
6 of 15
9397 750 07817
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS =25A;VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
62
ns
Qr
recovered charge
140
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd23
0
50
100
150
200
250
300
350
400
02
46
8
10
VDS (V)
ID
(A)
VGS (V) =
20
4.5
5.5
6.5
7.5
8.5
9.5
10
12
14
18
16
03nd22
6
8
10
12
14
510
15
20
VGS (V)
RDSon
(m
)
03nd24
6
8
10
12
14
16
18
20
22
0
50
100
150
200
250
300
ID (A)
RDSon
(m
)
VGS (V) = 10
8
5.5
6 6.5
7
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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